Intel introduced six new memory and storage products at Intel’s Memory and Storage 2020 event. Intel announced two new additions to its Intel Optane Solid State Drive Series: the Intel Optane SSD P5800X, the world’s fastest data center SSD, and the Intel Optane Memory H20. The new product features performance and mainstream productivity for gaming and content creation. Optane also allows users to meet the needs of modern computing by bringing the memory closer to the CPU.
3rd generation Intel Optane
Intel also announced its intent to deliver its 3rd generation of Intel Optane persistent memory for cloud and enterprise customers. Intel also announced three new NAND SSDs featuring 144-layer cell memory: the Intel SSD 670p, the company’s next-gen144-layer quad-level-cell 3D NAND SSD for mainstream computing; the Intel SSD D7-P5510, the world’s first-to-market 144-layer triple-level-cell NAND design; and the Intel SSD D5-P5316, a greater-density, higher-endurance SSD built around the industry’s first 144-layer QLC NAND.
With the new products, the company continues to establish a new tier in the data center memory and storage pyramid. It combines the features of DRAM and NAND. Optane SSDs alleviate data supply bottlenecks and accelerate applications with fast caching and fast storage. Optane persistent memory attached to the CPU with a double-data-rate bus, enabling direct load-and-store access at DRAM speeds. Alper Ilkbahar, Vice President, Data Platforms Group and General Manager, Intel Optane Group, Intel, said,
“Today is a key moment for our memory and storage journey. With the release of these new Optane products, we continue our innovation, strengthen our memory and storage portfolio, and enable our customers to better navigate the complexity of digital transformation. Optane products and technologies are becoming a mainstream element of business compute. And as a part of Intel, these leadership products are advancing our long-term growth priorities, including AI, 5G networking, and the intelligent, autonomous edge.”
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